Investigating the behavior of arsenic during silicide formation using Scanning Electron Microscopy (SEM), Rutherford Backscatter Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) in interconnects of new integrated circuit technologies.

Abstract

This paper presents a study on Arsenic behavior during high-temperature silicide production, focusing on sub-microcrystalline titanium. The investigation involved oriented monocrystalline silicon discs implanted with Arsenic through an oxide layer. The results showed strong migration of Arsenic in the titanium silicide, impacting formation kinetics. The study identified various mechanisms contributing to dopant redistribution, such as diffusion in Si, TiSi2, and Ti, evaporation from the titanium surface, and movement of dopants due to interface shifting. The solubility of Arsenic in different phases and segregating coefficients play essential roles in driving these redistribution processes. The findings have significant implications for optimizing CMOS scaling and miniaturization, guiding the development of self-aligned silicide structures to enhance CMOS device performance and support continued socio-economic progress through advanced integrated circuit technologies